In a groundbreaking development in semiconductor technology, researchers have achieved significant progress in the three-dimensional (3D) integration of emerging nanomaterials. The integration not only allows for the packaging of more devices per unit area but also introduces multifunctionalities for advanced technologies.

While silicon-based 3D integrated circuits have been commercially available, there has been limited effort to integrate two-dimensional (2D) materials despite their unique functionalities. However, a recent study has demonstrated remarkable achievements in the 3D integration of nanomaterials, specifically MoS2 and WSe2.

The researchers successfully implemented wafer-scale and monolithic two-tier 3D integration with more than 10,000 field-effect transistors (FETs) in each tier using MoS2. Additionally, they achieved three-tier 3D integration utilizing both MoS2 and WSe2, with approximately 500 FETs in each tier. Furthermore, a two-tier 3D integration was accomplished using 200 scaled MoS2 FETs in each tier, with a channel length of 45 nm.

Remarkably, the team also showcased the capability of creating a 3D circuit with multifunctional features, including sensing and storage. These demonstrations are anticipated to provide the foundation for highly dense and functionally diverse integrated circuits, incorporating a larger number of tiers integrated monolithically in the third dimension.

The successful integration of nanomaterials into 3D circuits opens up a wide range of possibilities for the development of advanced technology. With the increased number of devices that can be packaged in a smaller space, this breakthrough sets the stage for more sophisticated integrated circuits with enhanced capabilities.

The potential applications of this research are vast, from advancements in computing and electronics to the development of novel sensor systems and storage technologies. The multifunctionality of the integrated circuits holds promise for revolutionizing various industries, including healthcare, communications, and energy.

The research team behind this achievement envisions a future where highly advanced and compact integrated circuits become the norm, addressing the growing demands for smaller, faster, and more efficient devices.

As this technology continues to evolve, it is expected to shape the landscape of semiconductor industry and open up new avenues for innovation. The breakthrough in 3D integration of nanomaterials marks a significant milestone in the advancement of integrated circuits, heralding a new era of technology that pushes the boundaries of what is possible.